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RB530XN
Diodes
Schottky barrier diode
RB530XN
Applications Low current rectification External dimensions (Unit : mm)
2.00.2 Each lead has same dimension (5) (4)
Land size figure (Unit : mm)
0.65 0.65
0.25 0.1
0.05
0.150.05
Features 1) Small mold type. (UMD6) 2) Low IR 3) High reliability.
(6)
1.250.1
2.10.1
0.9
00.1 (1) 0.65 (2) 0.65 0.7 0.90.1 (3) 0.1Min
0.35
UMD6
1.30.1
Construction Silicon epitaxial planar
Structure
ROHM : UMD6 JEDEC : SOT-363 JEITA : SC-88 dot (year week factory)
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.50.1 0 0.30.1
3.50.05
1.750.1
2.450.1
2.40.1
5.50.2
8.00.2
2.20.1
4.00.1
1.10.1
00.5
2.40.1
1.150.1
Absolute maximum ratings (Ta=25C)
Param eter Revers e vltage Average rectified forward current*1 Forward current s urge peak 60Hz 1cyc *1 J unction tem perature S torage tem perature (*1) Rating of per diode Sym bol VR Io IFSM Tj Ts tg Lim its 30 100 1 125 -40 to +125 Unit V mA A
Electrical characteristics (Ta=25C, per chip)
Param eter Forward voltage Revers e current Sym bol VF1 VF2 IR Min. Typ. Max. 0.40 0.53 1 Unit V V A IF =10m A IF =100m A VR =10V Conditions
Rev.B
1.6
1/3
RB530XN
Diodes
Electrical characteristic curves (Ta=25C)
1000 Ta=125 1000000 Ta=125 100 f=1MH
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
Ta=75 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS Ta=25 Ta=-25
Ta=75 10000 1000 100 Ta=-25 10 1 0 10 20 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 30 Ta=25
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
100000
10
1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
450
1000
50 Ta=25 VR=10V n=30pcs Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
700 600 500 400 300 200 100 0 AVE:114nA
430 420 410 AVE:430.7mV 400
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
440
REVERSE CURRENT:IR(nA)
Ta=25 IF=100mA n=10pcs
900 800
40
30
20
10 AVE:28.2pF 0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
10
10
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 15
1cyc 8.3ms
Ifsm 8.3ms 8.3ms 1cyc 5
Ifsm t
10
5
5 AVE:5.60A 0
0 1 IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000
0.3 Rth(j-a) Per chip
0.01 Per chip 0.008
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
100
Rth(j-c)
Mounted on epoxy board IM=1mA IF=10mA
0.2
D=1/2 Sin(180) DC
REVERSE POWER DISSIPATION:PR (W)
FORWARD POWER DISSIPATION:Pf(W)
0.006 D=1/2 0.004 0.002 0 Sin(180)
DC
10
1ms time
0.1
300us
1 0.001
0 0.1 10 1000 0 0.1 0.2 0.3 0.4 0.5 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
0
10
20
30
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB530XN
Diodes
0.3 Per chip 0A 0V t T
0.3 Io Per chip VR D=t/T VR=15V Tj=125
0A 0V
Io t T VR D=t/T VR=15V Tj=125
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.2
DC D=1/2
0.2
DC
D=1/2 0.1 Sin(180) 0
0.1 Sin(180)
0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 125
0
25
50
75
100
125
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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